Infineon 64 kB 2 Wire I2C FRAM 8-Pin SOIC

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小計（1 管，共 97 件）*

HK$2,105.579

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97 - 97HK$21.707HK$2,105.58
194 - 291HK$21.273HK$2,063.48
388 +HK$20.847HK$2,022.16

* 參考價格

RS庫存編號:
188-5397
製造零件編號:
FM24C64B-G
製造商:
Infineon
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品牌

Infineon

Memory Size

64kB

Product Type

FRAM

Organisation

8K x 8 bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

550ns

Maximum Clock Frequency

1MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Standards/Approvals

No

Width

3.98 mm

Length

4.97mm

Height

1.38mm

Maximum Operating Temperature

85°C

Maximum Supply Voltage

5.5V

Minimum Supply Voltage

4.5V

Number of Words

8K

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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