Infineon 16 kB 2 Wire I2C FRAM 8-Pin DFN

RS庫存編號:: 188-5399
製造零件編號:: FM24CL16B-DG
製造商:: Infineon

Infineon 16 kB 2 Wire I2C FRAM 8-Pin DFN

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 81 件）*

HK$1,309.689

訂單超過 HK$250.00 免費送貨

暫時缺貨

從 2026年6月30日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
81 - 81	HK$16.169	HK$1,309.69
162 - 243	HK$15.764	HK$1,276.88
324 +	HK$15.521	HK$1,257.20

* 參考價格

RS庫存編號:: 188-5399
製造零件編號:: FM24CL16B-DG
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Memory Size	16kB
	Product Type	FRAM
	Organisation	2K x 8 bit
	Interface Type	2 Wire I2C
	Data Bus Width	8bit
	Maximum Random Access Time	3000ns
	Maximum Clock Frequency	1MHz
	Mount Type	Surface
	Package Type	DFN
	Pin Count	8
	Width	4 mm
	Height	0.75mm
	Length	4.5mm
	Standards/Approvals	No
	Maximum Operating Temperature	85°C
	Minimum Supply Voltage	2.7V
	Maximum Supply Voltage	3.65V
	Number of Bits per Word	8
	Minimum Operating Temperature	-40°C
	Automotive Standard	AEC-Q100
	Number of Words	2k

	選取全部
	品牌 Infineon
	Memory Size 16kB
	Product Type FRAM
	Organisation 2K x 8 bit
	Interface Type 2 Wire I2C
	Data Bus Width 8bit
	Maximum Random Access Time 3000ns
	Maximum Clock Frequency 1MHz
	Mount Type Surface
	Package Type DFN
	Pin Count 8
	Width 4 mm
	Height 0.75mm
	Length 4.5mm
	Standards/Approvals No
	Maximum Operating Temperature 85°C
	Minimum Supply Voltage 2.7V
	Maximum Supply Voltage 3.65V
	Number of Bits per Word 8
	Minimum Operating Temperature -40°C
	Automotive Standard AEC-Q100
	Number of Words 2k

COO (Country of Origin):: US

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 16 kB 2 Wire I2C FRAM 8-Pin DFN

訂單超過 HK$250.00 免費送貨

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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