Infineon 64 kB SPI FRAM 8-Pin SOIC

RS庫存編號:: 188-5413
製造零件編號:: FM25CL64B-G
製造商:: Infineon

可享批量折扣

小計（1 管，共 97 件）*

HK$2,028.561

訂單超過 HK$250.00 免費送貨

暫時缺貨

2,134 件從 2026年2月02日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
97 - 97	HK$20.913	HK$2,028.56
194 - 291	HK$20.547	HK$1,993.06
388 +	HK$20.17	HK$1,956.49

* 參考價格

RS庫存編號:: 188-5413
製造零件編號:: FM25CL64B-G
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Memory Size	64kB
	Product Type	FRAM
	Organisation	8K x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	20ns
	Maximum Clock Frequency	20MHz
	Mount Type	Surface
	Package Type	SOIC
	Pin Count	8
	Height	0.75mm
	Length	4.5mm
	Standards/Approvals	No
	Width	4 mm
	Maximum Operating Temperature	85°C
	Minimum Supply Voltage	2.7V
	Number of Bits per Word	8
	Maximum Supply Voltage	3.65V
	Automotive Standard	AEC-Q100
	Number of Words	8K
	Minimum Operating Temperature	-40°C

	選取全部
	品牌 Infineon
	Memory Size 64kB
	Product Type FRAM
	Organisation 8K x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 20ns
	Maximum Clock Frequency 20MHz
	Mount Type Surface
	Package Type SOIC
	Pin Count 8
	Height 0.75mm
	Length 4.5mm
	Standards/Approvals No
	Width 4 mm
	Maximum Operating Temperature 85°C
	Minimum Supply Voltage 2.7V
	Number of Bits per Word 8
	Maximum Supply Voltage 3.65V
	Automotive Standard AEC-Q100
	Number of Words 8K
	Minimum Operating Temperature -40°C

Datasheet FM25CL64B-G

COO (Country of Origin):: US

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 64 kB SPI FRAM 8-Pin SOIC

訂單超過 HK$250.00 免費送貨

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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