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小計（1 管，共 97 件）*
HK$1,006.472
添加 97 件 件可免費送貨
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- 485 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 97 - 97 | HK$10.376 | HK$1,006.47 |
| 194 - 291 | HK$10.116 | HK$981.25 |
| 388 + | HK$9.962 | HK$966.31 |
* 參考價格
- RS庫存編號:
- 188-5416
- 製造零件編號:
- FM25L16B-G
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 16kB | |
| Product Type | FRAM | |
| Organisation | 2K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 20ns | |
| Maximum Clock Frequency | 20MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Width | 3.98 mm | |
| Length | 4.97mm | |
| Height | 1.48mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Number of Words | 2k | |
| Automotive Standard | AEC-Q100 | |
| Minimum Supply Voltage | 2.7V | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 16kB | ||
Product Type FRAM | ||
Organisation 2K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 20ns | ||
Maximum Clock Frequency 20MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Width 3.98 mm | ||
Length 4.97mm | ||
Height 1.48mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Number of Words 2k | ||
Automotive Standard AEC-Q100 | ||
Minimum Supply Voltage 2.7V | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
相关链接
- Infineon 16 kB SPI FRAM 8-Pin SOIC, FM25L16B-G
- Infineon 16 kB SPI FRAM 8-Pin SOIC
- Infineon 16 kB SPI FRAM 8-Pin SOIC, FM25L16B-GTR
- Infineon 16 kB Serial-SPI Serial (SPI) Automotive FRAM 8-Pin SOIC-8
- Infineon 16 kB Serial-SPI Serial (SPI) Automotive FRAM 8-Pin SOIC-8, FM25C160B-G
- Infineon 16 kB SPI FRAM 8-Pin SOIC, FM25C160B-GTR
- Infineon 512 kB SPI FRAM 8-Pin SOIC
- Infineon 256 kB SPI FRAM 8-Pin SOIC