onsemi NCP51705MNTXG MOSFET Gate Driver 1, 6 A 24-Pin 22V, QFN
- RS庫存編號:
- 178-4643
- 製造零件編號:
- NCP51705MNTXG
- 製造商:
- onsemi
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HK$258.50
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | HK$25.85 | HK$258.50 |
| 750 - 1490 | HK$25.20 | HK$252.00 |
| 1500 + | HK$24.80 | HK$248.00 |
* 參考價格
- RS庫存編號:
- 178-4643
- 製造零件編號:
- NCP51705MNTXG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Output Current | 6A | |
| Pin Count | 24 | |
| Package Type | QFN | |
| Fall Time | 15ns | |
| Driver Type | MOSFET | |
| Number of Outputs | 5 | |
| Rise Time | 15ns | |
| Minimum Supply Voltage | 22V | |
| Maximum Supply Voltage | 22V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Width | 4mm | |
| Height | 0.95mm | |
| Length | 4mm | |
| Series | NCP51705 | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Output Current 6A | ||
Pin Count 24 | ||
Package Type QFN | ||
Fall Time 15ns | ||
Driver Type MOSFET | ||
Number of Outputs 5 | ||
Rise Time 15ns | ||
Minimum Supply Voltage 22V | ||
Maximum Supply Voltage 22V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Width 4mm | ||
Height 0.95mm | ||
Length 4mm | ||
Series NCP51705 | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard No | ||
The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.
Allow independent Turn-ON/Turn-OFF Adjustment
Efficient SiC MOSFET Operation during the Conduction Period
Fast Turn-off and Robust dV/dt Immunity
Minimize complexity of bias supply in isolated gate drive applications
Sufficient VGS amplitude to match SiC best performance
Self protection of the design
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