Infineon MOSFET Gate Driver 2, 2.5 A 14-Pin 25V, DSO
- RS庫存編號:
- 226-6026
- 製造零件編號:
- 2ED21824S06JXUMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
HK$28,660.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年3月29日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | HK$11.464 | HK$28,660.00 |
| 12500 + | HK$11.235 | HK$28,087.50 |
* 參考價格
- RS庫存編號:
- 226-6026
- 製造零件編號:
- 2ED21824S06JXUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Half Bridge Gate Driver | |
| Output Current | 2.5A | |
| Pin Count | 14 | |
| Package Type | DSO | |
| Fall Time | 30ns | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 15ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 25V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | 2ED21824S06J | |
| Width | 3.9mm | |
| Length | 8.65mm | |
| Standards/Approvals | RoHS | |
| Height | 1.72mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Half Bridge Gate Driver | ||
Output Current 2.5A | ||
Pin Count 14 | ||
Package Type DSO | ||
Fall Time 30ns | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 15ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 25V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series 2ED21824S06J | ||
Width 3.9mm | ||
Length 8.65mm | ||
Standards/Approvals RoHS | ||
Height 1.72mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 2ED21824S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
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