Infineon Gate Driver 1, 20 A 20-Pin 5.5V, DSO
- RS庫存編號:
- 232-3032
- 製造零件編號:
- 1EDI3030ASXUMA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 卷，共 1000 件）*
HK$21,677.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年1月25日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | HK$21.677 | HK$21,677.00 |
| 2000 - 2000 | HK$21.244 | HK$21,244.00 |
| 3000 + | HK$20.819 | HK$20,819.00 |
* 參考價格
- RS庫存編號:
- 232-3032
- 製造零件編號:
- 1EDI3030ASXUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | General Purpose Driver | |
| Output Current | 20A | |
| Pin Count | 20 | |
| Package Type | DSO | |
| Fall Time | 45ns | |
| Driver Type | General Purpose | |
| Number of Outputs | 4 | |
| Rise Time | 55ns | |
| Minimum Supply Voltage | 5.5V | |
| Maximum Supply Voltage | 5.5V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | 1EDI3030AS | |
| Length | 7.5mm | |
| Standards/Approvals | No | |
| Width | 6.4mm | |
| Height | 2.65mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type General Purpose Driver | ||
Output Current 20A | ||
Pin Count 20 | ||
Package Type DSO | ||
Fall Time 45ns | ||
Driver Type General Purpose | ||
Number of Outputs 4 | ||
Rise Time 55ns | ||
Minimum Supply Voltage 5.5V | ||
Maximum Supply Voltage 5.5V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series 1EDI3030AS | ||
Length 7.5mm | ||
Standards/Approvals No | ||
Width 6.4mm | ||
Height 2.65mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The Infineon has automotive qualified single channel high voltage gate driver optimized for SiC MOSFET. The 1EDI3030AS uses robust Infineon coreless transformer technology to provide bi-directional signal transfer across the galvanic isolation barrier. The compact package design and high level of feature integration save valuable PCB space and system cost, while pre-configured settings reduce design efforts.
For SiC-MOSFETs up to 1200 V
Propagation delay 60 ns typical
Redundant DESAT and OCP protection
Gate and output stage monitoring
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