STMicroelectronics STGWA30M65DF2AG IGBT, 87 A 650 V, 3-Pin TO-247 LL, Through Hole
- RS庫存編號:
- 330-470
- 製造零件編號:
- STGWA30M65DF2AG
- 製造商:
- STMicroelectronics
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HK$34.70
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$34.70 |
| 10 - 99 | HK$31.30 |
| 100 - 499 | HK$28.80 |
| 500 - 999 | HK$26.70 |
| 1000 + | HK$23.90 |
* 參考價格
- RS庫存編號:
- 330-470
- 製造零件編號:
- STGWA30M65DF2AG
- 製造商:
- STMicroelectronics
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 87A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 441W | |
| Package Type | TO-247 LL | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 19.92mm | |
| Height | 21mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 87A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 441W | ||
Package Type TO-247 LL | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 19.92mm | ||
Height 21mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
豁免
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Tight parameter distribution
Low thermal resistance
Soft and very fast-recovery antiparallel diode
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