STMicroelectronics STGWA30M65DF2AG IGBT, 87 A 650 V, 3-Pin TO-247 LL, Through Hole

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RS庫存編號:
330-470
製造零件編號:
STGWA30M65DF2AG
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Maximum Continuous Collector Current Ic

87A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Number of Transistors

1

Maximum Power Dissipation Pd

441W

Package Type

TO-247 LL

Mount Type

Through Hole

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101

Length

19.92mm

Height

21mm

Automotive Standard

AEC-Q101

豁免

COO (Country of Origin):
CN
The STMicroelectronics IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Tight parameter distribution

Low thermal resistance

Soft and very fast-recovery antiparallel diode

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