Semikron Danfoss SEMiX303GB12E4p, N-Channel IGBT Module, 469 A 1.2 kV, 11-Pin SEMiX3p, Surface
- RS庫存編號:
- 122-0391
- 製造零件編號:
- SEMiX303GB12E4p
- 製造商:
- Semikron Danfoss
小計(1 件)*
HK$2,788.40
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年2月23日 發貨
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單位 | 每單位 |
|---|---|
| 1 + | HK$2,788.40 |
* 參考價格
- RS庫存編號:
- 122-0391
- 製造零件編號:
- SEMiX303GB12E4p
- 製造商:
- Semikron Danfoss
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Semikron Danfoss | |
| Maximum Continuous Collector Current Ic | 469A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Package Type | SEMiX3p | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 11 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.4V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 17mm | |
| Standards/Approvals | No | |
| Width | 62.4mm | |
| Series | Trench | |
| Length | 150mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Semikron Danfoss | ||
Maximum Continuous Collector Current Ic 469A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Package Type SEMiX3p | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 11 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.4V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 17mm | ||
Standards/Approvals No | ||
Width 62.4mm | ||
Series Trench | ||
Length 150mm | ||
Automotive Standard No | ||
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
• Low profile solder-free mounting package
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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