製造零件編號

onsemi NGTB25N120FL3WG, N-Channel IGBT-Ultra Field Stop, 25 A 1.2 kV, 3-Pin TO-247, Through Hole

RS庫存編號:: 123-8830
製造零件編號:: NGTB25N120FL3WG
製造商:: onsemi

onsemi NGTB25N120FL3WG, N-Channel IGBT-Ultra Field Stop, 25 A 1.2 kV, 3-Pin TO-247, Through Hole

可享批量折扣

查看批量定價選項

小計（1 包，共 2 件）*

HK$118.70

訂單超過 HK$250.00 免費送貨

有庫存

加上 56 件從 2026年10月19日起發貨
加上 4 件從 2026年10月26日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
2 - 6	HK$59.35	HK$118.70
8 - 14	HK$57.90	HK$115.80
16 +	HK$56.95	HK$113.90

* 參考價格

RS庫存編號:: 123-8830
製造零件編號:: NGTB25N120FL3WG
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	IGBT-Ultra Field Stop
	Maximum Continuous Collector Current Ic	25A
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Maximum Power Dissipation Pd	349W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	1MHz
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.7V
	Maximum Operating Temperature	175°C
	Series	Field Stop
	Width	16.25mm
	Standards/Approvals	RoHS
	Length	20.8mm
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type IGBT-Ultra Field Stop
	Maximum Continuous Collector Current Ic 25A
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Maximum Power Dissipation Pd 349W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 1MHz
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO ±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.7V
	Maximum Operating Temperature 175°C
	Series Field Stop
	Width 16.25mm
	Standards/Approvals RoHS
	Length 20.8mm
	Automotive Standard No

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。

onsemi NGTB25N120FL3WG, N-Channel IGBT-Ultra Field Stop, 25 A 1.2 kV, 3-Pin TO-247, Through Hole

訂單超過 HK$250.00 免費送貨

批量購買價格選項

IGBT Discretes, ON Semiconductor

IGBT Discretes, ON Semiconductor

相关链接

第一時間了解我們的最新產品和優惠