STMicroelectronics STGB20N45LZAG, N-Channel IGBT, 25 A 450 V, 3-Pin TO-263, Surface
- RS庫存編號:
- 164-7013
- 製造零件編號:
- STGB20N45LZAG
- 製造商:
- STMicroelectronics
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HK$119.40
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 245 | HK$23.88 | HK$119.40 |
| 250 - 495 | HK$23.28 | HK$116.40 |
| 500 + | HK$22.92 | HK$114.60 |
* 參考價格
- RS庫存編號:
- 164-7013
- 製造零件編號:
- STGB20N45LZAG
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 25A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 8.4μs | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Gate Emitter Voltage VGEO | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Width | 9.35mm | |
| Series | Automotive Grade | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Energy Rating | 300mJ | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 25A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 8.4μs | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Gate Emitter Voltage VGEO 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Width 9.35mm | ||
Series Automotive Grade | ||
Length 10.4mm | ||
Height 4.6mm | ||
Energy Rating 300mJ | ||
Automotive Standard AEC-Q101 | ||
This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
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