IXYS IXGN320N60A3, N-Channel IGBT Module, 320 A 600 V, 4-Pin SOT-227, Surface
- RS庫存編號:
- 168-4582
- 製造零件編號:
- IXGN320N60A3
- 製造商:
- IXYS
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查看批量定價選項小計（1 管，共 10 件）*
HK$3,994.50
訂單超過 HK$250.00 免費送貨
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- 加上 300 件從 2026年9月28日 起發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 10 - 40 | HK$399.45 | HK$3,994.50 |
| 50 + | HK$391.47 | HK$3,914.70 |
* 參考價格
- RS庫存編號:
- 168-4582
- 製造零件編號:
- IXGN320N60A3
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 320A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 735W | |
| Package Type | SOT-227 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 4 | |
| Switching Speed | 5kHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 25.07mm | |
| Series | Low-Frequency | |
| Height | 9.6mm | |
| Length | 38.23mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 320A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 735W | ||
Package Type SOT-227 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 4 | ||
Switching Speed 5kHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 25.07mm | ||
Series Low-Frequency | ||
Height 9.6mm | ||
Length 38.23mm | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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