onsemi AFGB40T65SQDN, N-Channel IGBT, 80 A 650 V, 3-Pin TO-263, Surface

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣
查看批量定價選項

小計(1 包,共 2 件)*

HK$102.60

Add to Basket
選擇或輸入數量
有限的庫存
  • 3,124 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
每包*
2 - 198HK$51.30HK$102.60
200 - 398HK$50.05HK$100.10
400 +HK$49.30HK$98.60

* 參考價格

包裝方式:
RS庫存編號:
185-8642
製造零件編號:
AFGB40T65SQDN
製造商:
onsemi
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

onsemi

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

238W

Package Type

TO-263

Mount Type

Surface

Channel Type

N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

10.67mm

Length

9.65mm

Height

4.06mm

Standards/Approvals

RoHS, Pb-Free

Automotive Standard

AEC-Q101

Energy Rating

22.3mJ

不相容

COO (Country of Origin):
CN
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

VCE(sat) = 1.6 V (typ.) @ IC = 40 A

Low VF soft recovery co-packaged diode

For automotive

Low conduction loss

Low noise and conduction loss

Applications

Automotive On Board Charge

Automotive DC/DC converter for HEV

End Products

EV/PHEV

相关链接

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。