製造零件編號

STMicroelectronics STGWA30IH65DF, Type N-Channel IGBT, 60 A 650 V, 4-Pin TO-247, Through Hole

RS庫存編號:: 206-8630
製造零件編號:: STGWA30IH65DF
製造商:: STMicroelectronics

STMicroelectronics STGWA30IH65DF, Type N-Channel IGBT, 60 A 650 V, 4-Pin TO-247, Through Hole

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可享批量折扣

小計（1 包，共 5 件）*

HK$195.60

訂單超過 HK$250.00 免費送貨

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450 件從 2026年6月03日起裝運發貨

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單位	每單位	每包*
5 - 5	HK$39.12	HK$195.60
10 - 10	HK$37.96	HK$189.80
15 +	HK$36.82	HK$184.10

* 參考價格

RS庫存編號:: 206-8630
製造零件編號:: STGWA30IH65DF
製造商:: STMicroelectronics

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current Ic	60A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	108W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	4
	Switching Speed	1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT	2.05V
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	175°C
	Series	STG
	Standards/Approvals	RoHS
	Height	5.1mm
	Length	15.9mm
	Width	21.1 mm
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current Ic 60A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 108W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 4
	Switching Speed 1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT 2.05V
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 175°C
	Series STG
	Standards/Approvals RoHS
	Height 5.1mm
	Length 15.9mm
	Width 21.1 mm
	Automotive Standard No

Datasheet - STGWA30IH65DF

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Designed for soft commutation only

Maximum junction temperature: TJ = 175 °C

VCE(sat) = 1.55 V (typ.) @ IC = 30 A

Minimized tail current

Tight parameter distribution

Low thermal resistance

Low drop voltage freewheeling co-packaged diode

Positive VCE(sat) temperature coefficient

STMicroelectronics STGWA30IH65DF, Type N-Channel IGBT, 60 A 650 V, 4-Pin TO-247, Through Hole

訂單超過 HK$250.00 免費送貨

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