STMicroelectronics STGWA30IH65DF, N-Channel IGBT, 60 A 650 V, 4-Pin TO-247, Through Hole

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小計（1 管，共 30 件）*

HK$1,413.90

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單位
每單位
每管*
30 - 30HK$47.13HK$1,413.90
60 - 90HK$45.713HK$1,371.39
120 +HK$44.34HK$1,330.20

* 參考價格

RS庫存編號:
206-6065
製造零件編號:
STGWA30IH65DF
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Maximum Continuous Collector Current Ic

60A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

108W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

N

Pin Count

4

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.05V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Height

5.1mm

Standards/Approvals

RoHS

Width

21.1mm

Length

15.9mm

Series

STG

Automotive Standard

No

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Designed for soft commutation only

Maximum junction temperature: TJ = 175 °C

VCE(sat) = 1.55 V (typ.) @ IC = 30 A

Minimized tail current

Tight parameter distribution

Low thermal resistance

Low drop voltage freewheeling co-packaged diode

Positive VCE(sat) temperature coefficient

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