Infineon IKB40N65ES5ATMA1, N-Channel IGBT Single Transistor IC, 79 A 650 V, 3-Pin TO-263, Surface
- RS庫存編號:
- 215-6654
- 製造零件編號:
- IKB40N65ES5ATMA1
- 製造商:
- Infineon
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HK$18,645.00
訂單超過 HK$250.00 免費送貨
有庫存
- 4,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | HK$18.645 | HK$18,645.00 |
| 2000 - 2000 | HK$18.272 | HK$18,272.00 |
| 3000 + | HK$17.907 | HK$17,907.00 |
* 參考價格
- RS庫存編號:
- 215-6654
- 製造零件編號:
- IKB40N65ES5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 79A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 230W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 79A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 230W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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