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Infineon IKD15N60RATMA1, N-Channel IGBT, 30 A 600 V, 3-Pin TO-252, Surface

Name: Infineon IKD15N60RATMA1, N-Channel IGBT, 30 A 600 V, 3-Pin TO-252, Surface
Brand: Infineon
SKU: 215-6657
Availability: InStock

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HK$85.10

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current Ic	30A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	250W
	Package Type	TO-252
	Mount Type	Surface
	Channel Type	N
	Pin Count	3
	Switching Speed	20kHz
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Maximum Operating Temperature	175°C
	Series	TrenchStop
	Standards/Approvals	JEDEC
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current Ic 30A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 250W
	Package Type TO-252
	Mount Type Surface
	Channel Type N
	Pin Count 3
	Switching Speed 20kHz
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Maximum Operating Temperature 175°C
	Series TrenchStop
	Standards/Approvals JEDEC
	Automotive Standard No

The Infineon insulated-gate bipolar transistor with integrated diode in packages offering space saving advantage.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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