Infineon IGB50N65H5ATMA1, N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface
- RS庫存編號:
- 218-4390
- 製造零件編號:
- IGB50N65H5ATMA1
- 製造商:
- Infineon
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HK$144.50
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 245 | HK$28.90 | HK$144.50 |
| 250 - 495 | HK$28.18 | HK$140.90 |
| 500 + | HK$27.74 | HK$138.70 |
* 參考價格
- RS庫存編號:
- 218-4390
- 製造零件編號:
- IGB50N65H5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 270W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Length | 10.31mm | |
| Width | 9.45mm | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 270W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Length 10.31mm | ||
Width 9.45mm | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 80 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient
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