Infineon IKW30N65EL5XKSA1, N-Channel IGBT Single Transistor IC, 85 A 650 V, 3-Pin TO-247, Through Hole

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小計(1 管,共 30 件)*

HK$795.30

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RS庫存編號:
226-6112
製造零件編號:
IKW30N65EL5XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current Ic

85A

Product Type

IGBT Single Transistor IC

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

227W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Maximum Operating Temperature

175°C

Height

5.3mm

Width

16.3mm

Length

41.9mm

Standards/Approvals

JEDEC

Series

LowVCE(sat) Fifth Generation

Automotive Standard

No

The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.

Low gate charge QG

Maximum junction temperature 175°C

Qualified according to JEDEC for target applications

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