Infineon, Type N-Channel IGBT Single Transistor IC, 80 A 650 V, 3-Pin TO-247, Through Hole

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小計(1 管,共 240 件)*

HK$11,320.32

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每單位
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240 - 960HK$47.168HK$11,320.32
1200 +HK$42.451HK$10,188.24

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RS庫存編號:
228-6508
製造零件編號:
AIKW50N65RF5XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT Single Transistor IC

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

250W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±2 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Operating Temperature

175°C

Series

TrenchStop

Height

5.3mm

Standards/Approvals

AEC-Q101/100

Length

41.9mm

Automotive Standard

AEC-Q100, AEC-Q101

The Infineon AIKW50N65RF5 is hybrid power discrete with SiC power technology with best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. The hybrid of 650V TRENCHSTOP 5 AUTO fast switching IGBT and CoolSiC Schottky diode to enable a cost efficient performance boost for fast switching automotive applications such as on board charger, PFC, DC-DC and DC-AC.

Trenchstop 5 fast switching IGBT

Best in class efficiency in hard switching and resonant topologies

Low gate charge QG

Maximum junction temperature 175°C

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