Infineon, N-Channel IGBT, 35 A 1.2 kV, 23-Pin Module, Chassis
- RS庫存編號:
- 232-6706
- 製造零件編號:
- FP35R12N2T7B11BPSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 232-6706
- 製造零件編號:
- FP35R12N2T7B11BPSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 35A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 7 | |
| Package Type | Module | |
| Mount Type | Chassis | |
| Channel Type | N | |
| Pin Count | 23 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | FP35R12N2T7_B11 | |
| Length | 107.5mm | |
| Height | 21.3mm | |
| Width | 45mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 35A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 7 | ||
Package Type Module | ||
Mount Type Chassis | ||
Channel Type N | ||
Pin Count 23 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series FP35R12N2T7_B11 | ||
Length 107.5mm | ||
Height 21.3mm | ||
Width 45mm | ||
Automotive Standard No | ||
The Infineon's EconoPIM 2, 35 A three phase PIM IGBT module comes with TRENCHSTOP IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. Potential applications include auxiliary inverters, motor drives and servo drives.
RoHS-compliant modules
Copper base plate for optimized heat spread
High power density
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