Infineon, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 232-6733
- 製造零件編號:
- IKWH20N65WR6XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
HK$346.89
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | HK$11.563 | HK$346.89 |
| 60 - 60 | HK$10.983 | HK$329.49 |
| 90 + | HK$10.433 | HK$312.99 |
* 參考價格
- RS庫存編號:
- 232-6733
- 製造零件編號:
- IKWH20N65WR6XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 140W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | IKWH20N65WR6 | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 140W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Series IKWH20N65WR6 | ||
Length 21.1mm | ||
Automotive Standard No | ||
The Infineon's 20 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
相关链接
- Infineon IKWH20N65WR6XKSA1 40 A 650 V Through Hole
- Infineon 40 A 650 V Through Hole
- Infineon IKW40N65H5FKSA1 40 A 650 V Through Hole
- Infineon IHW40N65R5XKSA1 40 A 650 V Through Hole
- Infineon IKWH40N65WR6XKSA1 40 A 650 V Through Hole
- Infineon 70 A 650 V Screw
- Infineon IKWH70N65WR6XKSA1 70 A 650 V Screw
- Infineon 100 A 650 V Through Hole