Infineon FZ1800R45HL4BPSA1 Single IGBT Module, 1.8 kA 4500 V AG-IHVB190

RS庫存編號:: 236-5195
製造零件編號:: FZ1800R45HL4BPSA1
製造商:: Infineon

Infineon FZ1800R45HL4BPSA1 Single IGBT Module, 1.8 kA 4500 V AG-IHVB190

1 / 1

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Price 个**

原價 HK$19,340.30

HK$17,240.70

當前暫無庫存，可於2025/11/14發貨，3 工作日送達。*

* 交貨日期可能會根據您選擇的數量和交貨地址而變更。

訂單金額滿 HK$250.00 即可享受免費送貨服務

單位	每單位
1 - 1	HK$17,240.70
2 - 2	HK$16,895.90
3 +	HK$16,558.00

** 參考價格

RS庫存編號:: 236-5195
製造零件編號:: FZ1800R45HL4BPSA1
製造商:: Infineon

Infineon IGBT Module, 1.8 kA Maximum Continuous Collector Current, 4500V Maximum Collector Emitter Voltage - FZ1800R45HL4BPSA1

This IGBT module is designed for high-power applications within the power electronics sector. It features a maximum continuous collector current of 1.8kA and a collector-emitter voltage of up to 4500V, making it suitable for demanding environments. The dimensions of this compact module are 190 x 140 x 38.5 mm, ensuring flexible integration into various systems.

Features & Benefits

• High DC stability ensures consistent performance in challenging conditions
• Emitter-controlled 4 diode enhances short-circuit current handling
• Low collector-emitter saturation voltage improves energy efficiency
• Capable of high dynamic robustness for reliable operation
• Enhanced gate capacitance optimises switching performance

Applications

• Used for high-power converters in industrial environments
• Ideal for medium-voltage converter systems
• Suitable for power transmission and distribution networks

What is the significance of the collector-emitter voltage rating?

The collector-emitter voltage rating of 4500V ensures that the module can operate effectively even in high-voltage applications, preventing early failure and ensuring reliable performance.

How does the module enhance energy efficiency in power systems?

A low collector-emitter saturation voltage contributes to reduced energy losses during switching, making it ideal for applications requiring high energy efficiency.

What kind of thermal management solutions does it incorporate?

The module features an AlSiC base plate for improved thermal cycling capability, allowing it to operate efficiently even in fluctuating temperature conditions.

How does the dynamic robustness of this module benefit industrial automation?

Its high dynamic robustness facilitates reliable operation under varying load conditions, thus enhancing the overall stability and efficiency of industrial automation processes.

Can this module handle short-circuit conditions effectively?

Yes, the design includes emitter-controlled diodes that provide excellent short-circuit capability, allowing it to endure transient conditions without damage.

Attribute	Value
Maximum Continuous Collector Current	1.8 kA
Maximum Collector Emitter Voltage	4500 V
Maximum Gate Emitter Voltage	± 20V
Maximum Power Dissipation	4000 kW
Number of Transistors	3
Package Type	AG-IHVB190
Configuration	Single
Channel Type	N
Dimensions	190 x 140 x 38.5mm
Minimum Operating Temperature	-40 °C
Gate Capacitance	297nF
Maximum Operating Temperature	+150 °C