Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130

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包裝方式:
RS庫存編號:
236-5199
製造零件編號:
FZ825R33HE4DBPSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

825A

Maximum Collector Emitter Voltage Vceo

3300V

Number of Transistors

2

Maximum Power Dissipation Pd

2400kW

Package Type

AG-IHVB130

Configuration

Single

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.65V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

60749, 60068, IEC 60747

Width

62 mm

Height

16.4mm

Length

109.9mm

Automotive Standard

No

The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.

VCES is 3300 V

IC nom is 825 A

ICRM is 1650 A

It retains high current density

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