Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1.2 kV
- RS庫存編號:
- 244-5835
- 製造零件編號:
- FP50R12KE3BOSA1
- 製造商:
- Infineon
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HK$917.40
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- 從 2027年5月17日 發貨
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單位 | 每單位 | 節省 |
|---|---|---|
| 1 - 1 | HK$917.40 | - |
| 2 - 2 | HK$899.10 | 1% |
| 3 - 3 | HK$881.10 | 3% |
| 4 - 4 | HK$863.60 | 5% |
| 5 + | HK$846.20 | 7% |
* 參考價格
- RS庫存編號:
- 244-5835
- 製造零件編號:
- FP50R12KE3BOSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 280W | |
| Number of Transistors | 7 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | FP50R12KE3 | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 280W | ||
Number of Transistors 7 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Series FP50R12KE3 | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA
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