Infineon IGBT Module, 900 A 1200 V

This IGBT module is a high-voltage switching device designed for demanding power-conversion tasks in industrial environments. It provides robust switching at elevated temperatures and supports heavy continuous currents, making it suitable for applications requiring substantial power handling and thermal endurance.

• 1200 V maximum collector-emitter rating enables high-voltage switching capability
• 900 A continuous collector current supports sustained high-current operation
• 4300 W maximum power dissipation allows intensive power handling
• 2.1 V collector-emitter saturation reduces conduction losses
• 20 V maximum gate-emitter rating ensures controlled gate-drive margins
• Operates from −40 °C up to 150 °C for wide thermal-range performance

• Suitable for high-power industrial 1200 V converters and inverters
• Ideal for traction drives requiring a 900 A power-transistor module
• Used with power supplies needing low-saturation-voltage switching
• Can be used for motor drives operating across wide temperatures
• Appropriate for heavy-duty DC-DC conversion in industrial systems

It is UL listed under approval E83335, which confirms third-party electrical-safety assessment.

The gate-emitter voltage must not exceed 20 V to prevent device damage.

The part continues to function from −40 °C to 150 °C, allowing placement in both cold-start and high-temperature enclosures.

The 4300 W dissipation indicates the maximum thermal energy it can handle under specified cooling conditions and informs cooling-system design.