Bourns BIDW50N65T IGBT, 100 A 650 V TO-247
- RS庫存編號:
- 253-3508
- 製造零件編號:
- BIDW50N65T
- 製造商:
- Bourns
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小計（1 管，共 600 件）*
HK$29,233.80
訂單超過 HK$250.00 免費送貨
有庫存
- 600 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 600 + | HK$48.723 | HK$29,233.80 |
* 參考價格
- RS庫存編號:
- 253-3508
- 製造零件編號:
- BIDW50N65T
- 製造商:
- Bourns
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Bourns | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Package Type | TO-247 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V (Gate-Emitter Voltage VGE ) | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Bourns | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Package Type TO-247 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V (Gate-Emitter Voltage VGE ) | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).
650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
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