Infineon FF900R12ME7B11NPSA1 2 Independent IGBT, 900 A 1200 V AG-ECONOD-711
- RS庫存編號:
- 258-0855
- 製造零件編號:
- FF900R12ME7B11NPSA1
- 製造商:
- Infineon
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HK$1,831.20
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- 從 2026年9月28日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 1 | HK$1,831.20 |
| 2 - 3 | HK$1,794.60 |
| 4 - 5 | HK$1,758.70 |
| 6 + | HK$1,723.60 |
* 參考價格
- RS庫存編號:
- 258-0855
- 製造零件編號:
- FF900R12ME7B11NPSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 900A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Configuration | 2 Independent | |
| Package Type | AG-ECONOD-711 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 900A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Configuration 2 Independent | ||
Package Type AG-ECONOD-711 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
不相容
The Infineon EconoDUAL 3 1200 V, 900 A dual TRENCHSTOP IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Also available with pre-applied thermal interface material.
Highest power density
Isolated baseplate
相关链接
- Infineon 2 Independent IGBT, 900 A 1200 V AG-ECONOD-711
- Infineon 900 A 1200 V Surface
- Infineon FF900R12ME7B11BOSA1 900 A 1200 V Surface
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