STMicroelectronics IGBT, 80 A 650 V, 3-Pin TO-247

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有IGBTs
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
包裝方式：
RS庫存編號:
261-5072P
製造零件編號:
STGWA80H65DFBAG
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

535W

Package Type

TO-247

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

15V

Maximum Operating Temperature

175°C

Width

21mm

Standards/Approvals

No

Height

5mm

Length

15.8mm

Series

STGWA

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

AEC-Q101 qualified

High-speed switching series

Maximum junction temperature TJ is 175 degree C

Minimized tail current

Tight parameter distribution

Positive temperature VCE(sat) coefficient

Soft and very fast recovery antiparallel diode

相关链接

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。