Infineon BSC16DN25NS3GATMA1, Type N-Channel Single IGBT, 10.9 A, 8-Pin PG-TDSON-8, Through Hole
- RS庫存編號:
- 273-5239
- 製造零件編號:
- BSC16DN25NS3GATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
小計(1 卷,共 5000 件)*
HK$37,920.00
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 + | HK$7.584 | HK$37,920.00 |
* 參考價格
- RS庫存編號:
- 273-5239
- 製造零件編號:
- BSC16DN25NS3GATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 10.9A | |
| Product Type | IGBT | |
| Maximum Power Dissipation Pd | 62.5W | |
| Number of Transistors | 1 | |
| Configuration | Single | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.15mm | |
| Length | 5.1mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 10.9A | ||
Product Type IGBT | ||
Maximum Power Dissipation Pd 62.5W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type PG-TDSON-8 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.15mm | ||
Length 5.1mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel MOSFET with 150 degree Celsius operating temperature. It is an optimized for dc to dc conversion. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.
RoHS compliant
Pb free lead plating
Low on resistance
Excellent gate charge
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