Infineon IHW20N120R5XKSA1 IGBT Single Transistor IC, 20 A 1200 V, 3-Pin PG-TO-247

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240 - 240HK$16.141HK$3,873.84
480 +HK$15.495HK$3,718.80

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RS庫存編號:
244-2913
製造零件編號:
IHW20N120R5XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT Single Transistor IC

Maximum Continuous Collector Current Ic

20A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

288W

Package Type

PG-TO-247

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.55V

Maximum Gate Emitter Voltage VGEO

±20 %

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Width

16.13mm

Standards/Approvals

IEC61249-2-21, RoHS

Series

Resonant Switching

Height

5.21mm

Length

42mm

Automotive Standard

No

Infineon Resonant Switching Series IGBT Single Transistor IC, 1200V Max Collector Emitter Voltage, 20A Max Continuous Collector Current - IHW20N120R5XKSA1


This IGBT single-transistor IC is a high-voltage switching device designed for power conversion and control in demanding electrical systems. It operates across a wide temperature span and is intended for applications requiring elevated voltage handling and substantial continuous current capacity. The component is supplied in a PG-TO-247 package and complies with specified material and hazardous-substance standards.

Features and Benefits:


• 1200 V collector-emitter withstand enables high-voltage switching
• 20 A continuous collector current supports sustained power delivery
• 1.55 V Vce(sat) reduces conduction losses during on-state operation
• 288 W maximum power dissipation allows heavy-load thermal margin
• ±20 V gate-emitter rating permits standard gate-drive amplitudes
• Operates from −40 °C to 175 °C for extended temperature resilience

Applications


• Suitable for resonant switching topologies in power converters
• Used for 1200 V 20 A IGBT transistor roles in industrial inverters
• Ideal for high-power IGBT 288 W modules in motor drives
• Can be used for PG-TO-247 IGBT module replacements in assemblies
• Appropriate for high-temperature IGBT −40 to 175 °C environments

What packaging is provided for straightforward board or heatsink mounting?


It is supplied in a PG-TO-247 package suitable for standard through-hole mounting and conventional heatsinking.

Which material and hazardous-substance standards does it meet?


The device is RoHS-compliant and meets IEC 61249-2-21 material specifications.

What electrical limit defines gate-drive safety?


The gate-emitter voltage is limited to ±20 V to prevent gate oxide stress.

How should designers assess thermal capacity for sustained operation?


Use the 288 W maximum power dissipation rating to size heatsinks and cooling for continuous loads.

What temperature extremes can the device tolerate in operation?


It functions from a minimum of −40 °C up to a maximum of 175 °C for elevated-temperature applications.

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