onsemi FGH40N60UFDTU, N-Channel IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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包裝方式:
RS庫存編號:
759-9273
製造零件編號:
FGH40N60UFDTU
製造商:
onsemi
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品牌

onsemi

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

290W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.4V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Series

Field Stop

Automotive Standard

No

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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