onsemi ISL9V2040D3ST, Type N-Channel IGBT, 10 A 430 V, 3-Pin TO-252, Surface
- RS庫存編號:
- 862-9347
- 製造零件編號:
- ISL9V2040D3ST
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$71.40
訂單超過 HK$250.00 免費送貨
正在逐步停售
- 最終 2,020 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | HK$14.28 | HK$71.40 |
| 625 - 1245 | HK$14.02 | HK$70.10 |
| 1250 + | HK$13.74 | HK$68.70 |
* 參考價格
- RS庫存編號:
- 862-9347
- 製造零件編號:
- ISL9V2040D3ST
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Maximum Continuous Collector Current Ic | 10A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 430V | |
| Maximum Power Dissipation Pd | 130W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±10 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | EcoSPARK | |
| Standards/Approvals | RoHS | |
| Energy Rating | 200mJ | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Maximum Continuous Collector Current Ic 10A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 430V | ||
Maximum Power Dissipation Pd 130W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±10 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series EcoSPARK | ||
Standards/Approvals RoHS | ||
Energy Rating 200mJ | ||
Automotive Standard No | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
相关链接
- onsemi 10 A 430 V Surface
- onsemi 21 A 430 V Surface
- onsemi ISL9V3040D3ST 21 A 430 V Surface
- onsemi 41 A 400 V Surface
- onsemi FGD3040G2-F085 41 A 400 V Surface
- Fairchild Semiconductor 21 A 430 V Surface
- Semikron Danfoss SKM400GB176D 430 A 1700 V Panel
- Fairchild Semiconductor ISL9V3040S3ST 21 A 430 V Surface