Fairchild Semiconductor, Type N-Channel IGBT, 21 A 430 V, 3-Pin TO-263, Surface
- RS庫存編號:
- 862-9353P
- 製造零件編號:
- ISL9V3040S3ST
- 製造商:
- Fairchild Semiconductor
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可享批量折扣
小計 200 件 (以卷裝提供)*
HK$4,928.00
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 485 件從 2026年4月27日 起發貨
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單位 | 每單位 |
|---|---|
| 200 - 395 | HK$24.64 |
| 400 + | HK$24.26 |
* 參考價格
- RS庫存編號:
- 862-9353P
- 製造零件編號:
- ISL9V3040S3ST
- 製造商:
- Fairchild Semiconductor
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Fairchild Semiconductor | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 21A | |
| Maximum Collector Emitter Voltage Vceo | 430V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | EcoSPARK | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 300mJ | |
| 選取全部 | ||
|---|---|---|
品牌 Fairchild Semiconductor | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 21A | ||
Maximum Collector Emitter Voltage Vceo 430V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series EcoSPARK | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 300mJ | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.