Infineon IKW08T120FKSA1, N-Channel IGBT, 8 A 1.2 kV, 3-Pin TO-247, Through Hole

RS庫存編號:: 892-2129
製造零件編號:: IKW08T120FKSA1
製造商:: Infineon

Infineon IKW08T120FKSA1, N-Channel IGBT, 8 A 1.2 kV, 3-Pin TO-247, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

享受批量購買折扣

額外添加8件可節省2%

查看批量定價選項

小計（1 包，共 4 件）*

HK$162.40

訂單超過 HK$250.00 免費送貨

最後的 RS 庫存

加上 8 件從 2026年11月09日起發貨
最終 4 件從 2026年11月16日起發貨

單位	每單位	每包*	節省
4 - 4	HK$40.60	HK$162.40	-
8 +	HK$39.55	HK$158.20	2%

* 參考價格

RS庫存編號:: 892-2129
製造零件編號:: IKW08T120FKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current Ic	8A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Maximum Power Dissipation Pd	70W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	20kHz
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.2V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Series	TrenchStop
	Standards/Approvals	Pb-free lead plating, RoHS, JEDEC1
	Energy Rating	2.28mJ
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current Ic 8A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Maximum Power Dissipation Pd 70W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 20kHz
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Series TrenchStop
	Standards/Approvals Pb-free lead plating, RoHS, JEDEC1
	Energy Rating 2.28mJ
	Automotive Standard No

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IKW08T120FKSA1, N-Channel IGBT, 8 A 1.2 kV, 3-Pin TO-247, Through Hole

訂單超過 HK$250.00 免費送貨

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

IGBT Discretes & Modules, Infineon

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Infineon IKW08T120FKSA1, N-Channel IGBT, 8 A 1.2 kV, 3-Pin TO-247, Through Hole

訂單超過 HK$250.00 免費送貨

批量購買價格選項

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

IGBT Discretes & Modules, Infineon

相关链接

第一時間了解我們的最新產品和優惠