STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 1.5 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH2N120K5-2AG
- RS庫存編號:
- 151-438
- 製造零件編號:
- STH2N120K5-2AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 組，共 2 件）*
HK$83.30
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 578 件從 2026年6月01日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | HK$41.65 | HK$83.30 |
| 20 - 198 | HK$37.55 | HK$75.10 |
| 200 + | HK$34.55 | HK$69.10 |
* 參考價格
- RS庫存編號:
- 151-438
- 製造零件編號:
- STH2N120K5-2AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-2 | |
| Series | MDmesh K5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 5.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.7mm | |
| Standards/Approvals | RoHS | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-2 | ||
Series MDmesh K5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 5.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.7mm | ||
Standards/Approvals RoHS | ||
Length 15.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.
AEC Q101 qualified
Industry’s lowest RDS(on) x area
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
相关链接
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK-2 STH2N120K5-2AG
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK-2 STH13N120K5-2AG
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 STW8N120K5
- STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET 1200 V Enhancement Mode, 3-Pin H2PAK-2
- STMicroelectronics STH285N10F8-2AG N channel-Channel Power MOSFET 100 V Enhancement Mode, 3-Pin H2PAK-2
- STMicroelectronics MDmesh Type N-Channel MOSFET 1500 V Enhancement, 3-Pin H2PAK
- STMicroelectronics MDmesh Type N-Channel MOSFET 1500 V Enhancement, 3-Pin H2PAK STH3N150-2