STMicroelectronics SuperMESH Dual N-Channel MOSFET, 400 mA, 450 V Enhancement, 8-Pin SO-8 STS1DNC45
- RS庫存編號:
- 151-447
- 製造零件編號:
- STS1DNC45
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 組，共 10 件）*
HK$135.40
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | HK$13.54 | HK$135.40 |
| 100 - 240 | HK$12.85 | HK$128.50 |
| 250 - 490 | HK$11.92 | HK$119.20 |
| 500 - 990 | HK$10.96 | HK$109.60 |
| 1000 + | HK$10.55 | HK$105.50 |
* 參考價格
- RS庫存編號:
- 151-447
- 製造零件編號:
- STS1DNC45
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Dual N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 450V | |
| Package Type | SO-8 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -65°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Dual N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 450V | ||
Package Type SO-8 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -65°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Standard outline for easy automated surface mount assembly
Gate charge minimized
相关链接
- STMicroelectronics SuperMESH Dual N-Channel MOSFET 450 V Enhancement, 8-Pin SO-8 STS1DNC45
- Vishay SQ4940CEY Dual N-Channel Single MOSFETs 40 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 2 N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 N-Channel MOSFET 50 V Enhancement, 8-Pin SO-8
- Vishay SQ4940CEY Dual N-Channel Single MOSFETs 40 V Enhancement, 8-Pin SO-8 SQ4940CEY-T1_GE3
- Vishay SQ4946CEY Dual N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_BE3
- Infineon Dual HEXFET 1 N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 IRF8734TRPBF
- Infineon Dual HEXFET 2 N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8 AUIRF7341QTR