IXYS Single HiperFET, Polar N-Channel MOSFET, 150 A, 150 V Enhancement, 4-Pin SOT-227 IXFN180N15P

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包裝方式:
RS庫存編號:
194-259P
製造零件編號:
IXFN180N15P
製造商:
IXYS
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品牌

IXYS

Transistor Configuration

Single

Series

HiperFET, Polar

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

150 A

Maximum Drain Source Voltage (Vds)

150 V

Channel Mode

Enhancement

Pin Count

4

Package Type

SOT-227

Height

9.6 mm

Length

38.23 mm

Maximum Drain Source Resistance (Rds)

11 mΩ

Maximum Gate Source Voltage (Vgs)

-20 V, +20 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

680 W

Minimum Operating Temperature

-55 °C

Mount Type

Panel Mount

Typical Gate Charge (Qg) @ Vgs

240 nC

Width

25.42 mm

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