Nexperia PSM Type N-Channel MOSFET, 111 A, 100 V Enhancement, 5-Pin LFPAK PSMN7R2-100YSFX
- RS庫存編號:
- 219-372
- 製造零件編號:
- PSMN7R2-100YSFX
- 製造商:
- Nexperia
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HK$18.00
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- RS庫存編號:
- 219-372
- 製造零件編號:
- PSMN7R2-100YSFX
- 製造商:
- Nexperia
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 111A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 6.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 194W | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 111A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 6.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 194W | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET is qualified to 175°C. It is Ideal for both industrial and consumer applications. It is suitable for synchronous rectification in AC-DC and DC-DC converters, primary side switching in 48V DC-DC systems, BLDC motor control, USB-PD and mobile fast-charge adapters, as well as flyback and resonant topologies.
Strong avalanche energy rating
Avalanche rated and 100% tested
Ha free and RoHS compliant
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