ROHM QH8 2 Type N-Channel MOSFET, 100 V Enhancement, 8-Pin TSMT-8 QH8KE5TCR
- RS庫存編號:
- 264-562
- 製造零件編號:
- QH8KE5TCR
- 製造商:
- ROHM
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可享批量折扣
小計（1 組，共 25 件）*
HK$78.00
訂單超過 HK$250.00 免費送貨
有庫存
- 2,975 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 25 - 75 | HK$3.12 | HK$78.00 |
| 100 - 225 | HK$2.964 | HK$74.10 |
| 250 - 475 | HK$2.744 | HK$68.60 |
| 500 - 975 | HK$2.524 | HK$63.10 |
| 1000 + | HK$2.436 | HK$60.90 |
* 參考價格
- RS庫存編號:
- 264-562
- 製造零件編號:
- QH8KE5TCR
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | QH8 | |
| Package Type | TSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 202mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.5W | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 100V | ||
Series QH8 | ||
Package Type TSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 202mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.5W | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM 100V 2.0A dual N-channel power MOSFET in a TSMT8 package is designed for high-efficiency switching power supply and motor drive applications.
Low on-resistance
Small Surface Mount Package TSMT8
Pb-free plating and RoHS compliant
Halogen Free
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