ROHM SCT N-Channel MOSFET, 24 A, 1.2 kV Enhancement, 7-Pin TO-263 SCT4062KWATL
- RS庫存編號:
- 264-592
- 製造零件編號:
- SCT4062KWATL
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 組，共 5 件）*
HK$404.60
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 5 - 45 | HK$80.92 | HK$404.60 |
| 50 - 95 | HK$76.86 | HK$384.30 |
| 100 + | HK$71.22 | HK$356.10 |
* 參考價格
- RS庫存編號:
- 264-592
- 製造零件編號:
- SCT4062KWATL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-263 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 124mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 21V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 93W | |
| Forward Voltage Vf | 3.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-263 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 124mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 21V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 93W | ||
Forward Voltage Vf 3.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM 1200V 24A silicon carbide SiC trench MOSFET in a 7-pin SMD package offers high voltage resistance, low on-resistance, and fast switching speed.
Low on-resistance
Fast switching speed
Fast reverse recovery
Easy to parallel
Simple to drive
Pb-free lead plating and RoHS compliant
Wide creep age distance equal to min. 4.7mm
相关链接
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263 SCT3105KW7TL
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263 SCT3080KW7TL
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263 SCT3160KW7TL
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263-7LA SCT3160KWATL
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263-7LA SCT4062KWAHRTL