ROHM HP8 2 Type N-Channel MOSFET, 10 A, 60 V Enhancement, 8-Pin HSMT-8 HT8KC5TB1
- RS庫存編號:
- 264-764
- 製造零件編號:
- HT8KC5TB1
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 10 件）*
HK$78.80
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | HK$7.88 | HK$78.80 |
| 100 - 240 | HK$7.49 | HK$74.90 |
| 250 - 490 | HK$6.93 | HK$69.30 |
| 500 - 990 | HK$6.38 | HK$63.80 |
| 1000 + | HK$6.14 | HK$61.40 |
* 參考價格
- RS庫存編號:
- 264-764
- 製造零件編號:
- HT8KC5TB1
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSMT-8 | |
| Series | HP8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Power Dissipation Pd | 13W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSMT-8 | ||
Series HP8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Power Dissipation Pd 13W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM 60V 10A Dual Nch+Pch is a low on-resistance MOSFET ideal for switching applications.
High Power small mold Package (HSMT8)
Pb-free lead plating and RoHS compliant
Halogen Free
相关链接
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