Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -22 A, 150 V Enhancement, 8-Pin PG-TDSON-8 ISC16DP15LMATMA1

此圖片僅供參考,請參閲產品詳細資訊及規格

小計(1 卷,共 5000 件)*

HK$75,135.00

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年8月28日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
5000 +HK$15.027HK$75,135.00

* 參考價格

RS庫存編號:
284-785
製造零件編號:
ISC16DP15LMATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-22A

Maximum Drain Source Voltage Vds

150V

Package Type

PG-TDSON-8

Series

OptiMOS Power Transistor

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

188W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an OptiMOS Power Transistor is designed to deliver exceptional performance for a range of industrial applications. With its Advanced P channel architecture and robust construction, it ensures reliability even under demanding conditions. Boasting a breakdown voltage of 150 V, this transistor is engineered to handle significant voltages effectively. Its low on resistance helps improve efficiency, making it a valuable component in power management systems. By aligning with RoHS compliance standards, this transistor further emphasises its commitment to environmental sustainability, making it an excellent choice for forward thinking projects.

Very low on resistance for efficiency

100% avalanche tested for reliability

Logic level gate drive compatibility

Excellent thermal performance reduces heat

RoHS compliant for eco friendliness

Qualified per JEDEC standards for reliability

Compact design for adaptable configurations

Halogen free lead plating for environmental safety

相关链接

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。