STMicroelectronics STL N-Channel STripFET F8 Power MOSFET, 154 A, 40 V, 8-Pin PowerFLAT STL165N4F8AG
- RS庫存編號:
- 330-570
- 製造零件編號:
- STL165N4F8AG
- 製造商:
- STMicroelectronics
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HK$17.00
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- 3,000 件從 2026年11月09日 起裝運發貨
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單位 | 每單位 | 節省 |
|---|---|---|
| 1 - 9 | HK$17.00 | - |
| 10 - 99 | HK$15.30 | 9% |
| 100 - 499 | HK$14.00 | 17% |
| 500 - 999 | HK$13.10 | 22% |
| 1000 + | HK$11.80 | 30% |
* 參考價格
- RS庫存編號:
- 330-570
- 製造零件編號:
- STL165N4F8AG
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | STripFET F8 Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 154A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerFLAT | |
| Series | STL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 111W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.4mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 5.2mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type STripFET F8 Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 154A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerFLAT | ||
Series STL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 111W | ||
Maximum Operating Temperature 175°C | ||
Length 6.4mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 5.2mm | ||
Automotive Standard AEC-Q101 | ||
豁免
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel enhancement mode Power MOSFET designed in STripFET F8 technology, featuring an enhanced trench gate structure. It delivers a state-of-the-art figure of merit with very low on-state resistance, reduced internal capacitances, and gate charge, enabling faster and more efficient switching.
100% avalanche tested
Low gate charge Qg
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