ROHM RQ3N060AT Type P-Channel MOSFET, 18 A, 80 V Enhancement, 8-Pin HSOP-8 RQ3N060ATTB1
- RS庫存編號:
- 331-689
- 製造零件編號:
- RQ3N060ATTB1
- 製造商:
- ROHM
可享批量折扣
查看批量定價選項小計（1 組，共 10 件）*
HK$105.60
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | HK$10.56 | HK$105.60 |
| 100 - 240 | HK$10.03 | HK$100.30 |
| 250 - 490 | HK$9.29 | HK$92.90 |
| 500 - 990 | HK$8.54 | HK$85.40 |
| 1000 + | HK$8.23 | HK$82.30 |
* 參考價格
- RS庫存編號:
- 331-689
- 製造零件編號:
- RQ3N060ATTB1
- 製造商:
- ROHM
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | RQ3N060AT | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 20W | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series RQ3N060AT | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 20W | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM Power MOSFET is a low on resistance MOSFET ideal for switching and motor drives applications. This power MOSFET comes in a high power small mould package.
Pb free plating
RoHS compliant
Halogen free
100 percent Rg and UIS tested
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