Infineon OptiMOS 5 Type N-Channel MOSFET, 789 A, 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1
- RS庫存編號:
- 348-884
- 製造零件編號:
- IQDH29NE2LM5SCATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
HK$79.40
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年10月08日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | HK$39.70 | HK$79.40 |
| 20 - 198 | HK$35.80 | HK$71.60 |
| 200 - 998 | HK$32.95 | HK$65.90 |
| 1000 - 1998 | HK$30.60 | HK$61.20 |
| 2000 + | HK$27.40 | HK$54.80 |
* 參考價格
- RS庫存編號:
- 348-884
- 製造零件編號:
- IQDH29NE2LM5SCATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 789A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 789A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- AT
The Infineon Power MOSFET comes with industry’s lowest RDS(ON) of 0.29 mOhm combined with outstanding thermal performance for easy power loss management.
Minimized conduction losses
Fast switching
Reduced voltage overshoot
相关链接
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