Infineon IMB N-Channel MOSFET, 10.5 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1

RS庫存編號:: 349-105
製造零件編號:: IMBG120R181M2HXTMA1
製造商:: Infineon

Infineon IMB N-Channel MOSFET, 10.5 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1

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RS庫存編號:: 349-105
製造零件編號:: IMBG120R181M2HXTMA1
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10.5A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	PG-TO263-7
	Series	IMB
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	181.4mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.7nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	94W
	Maximum Gate Source Voltage Vgs	25V
	Maximum Operating Temperature	175°C
	Height	4.5mm
	Length	15mm
	Width	10.2mm
	Standards/Approvals	JEDEC47/20/22, RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10.5A
	Maximum Drain Source Voltage Vds 1200V
	Package Type PG-TO263-7
	Series IMB
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 181.4mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.7nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 94W
	Maximum Gate Source Voltage Vgs 25V
	Maximum Operating Temperature 175°C
	Height 4.5mm
	Length 15mm
	Width 10.2mm
	Standards/Approvals JEDEC47/20/22, RoHS
	Automotive Standard No

Datasheet - IMBG120R181M2HXTMA1

COO (Country of Origin):: MY

The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.

Robust body diode for hard commutation

The .XT interconnection technology for best in class thermal performance

Better energy efficiency

Cooling optimization

Higher power density

New robustness features

Highly reliable

Infineon IMB N-Channel MOSFET, 10.5 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1

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