Infineon CoolSiC Type N-Channel MOSFET, 34 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R075M1HXKSA1

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HK$340.10

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RS庫存編號:
349-113
製造零件編號:
IMYH200R075M1HXKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

2000V

Series

CoolSiC

Package Type

PG-TO-247-4-PLUS-NT14

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

106mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

267W

Typical Gate Charge Qg @ Vgs

64nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET is a high performance silicon carbide MOSFET featuring .XT interconnection technology for enhanced thermal and electrical performance. With a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it offers reliable and efficient switching, making it ideal for high voltage power applications. This MOSFET delivers superior performance, ensuring excellent efficiency and robust operation even in demanding environments.

Very low switching losses

Robust body diode for hard commutation

RoHS compliant

Halogen free

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