Infineon ISC Type N-Channel Power Transistor, 172 A, 135 V Enhancement, 8-Pin PG-TSON-8 ISC037N13NM6ATMA1

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RS庫存編號:
349-142
製造零件編號:
ISC037N13NM6ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

172A

Maximum Drain Source Voltage Vds

135V

Package Type

PG-TSON-8

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

82nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, JEDEC, IEC61249-2-21

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency. The transistor also offers an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching performance. With very low reverse recovery charge (Qrr), it reduces switching losses, making it suitable for fast-switching applications. Additionally, the device is 100% avalanche tested, ensuring reliability and robustness under stress conditions.

175°C operating temperature

Optimized for motor drives and battery powered applications

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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