Infineon ISZ N-Channel Power Transistor, 26 A, 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1

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小計(1 包,共 5 件)*

HK$86.30

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每單位
每包*
5 - 45HK$17.26HK$86.30
50 - 95HK$16.40HK$82.00
100 - 495HK$15.18HK$75.90
500 - 995HK$13.98HK$69.90
1000 +HK$13.46HK$67.30

* 參考價格

RS庫存編號:
349-157
製造零件編號:
ISZ520N20NM6ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

Power Transistor

Channel Type

N

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

200V

Series

ISZ

Package Type

PG-TSDSON-8FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.9nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

88W

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249‑2‑21, JEDEC, J-STD-020, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 MOSFET is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.

Low conduction losses

Low switching losses

Stable operation with improved EMI

Less paralleling required

Better current sharing when paralleling

Environmentally friendly

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